导致器件的损伤主要是位于漏端附近的栅氧化层中。

   这里用模拟的方法验证了在中栅AD8058AR热载流子应力条件下深亚微米NMOS器件性能退化主要是由于界面态产生导致的,指出了电子迁移率衰退和阈值电压增大是导致深亚微米NMOSFETs电学性能退化的根本原因。

   参者文献

   [1]E.R.Minami,K。N。QuodCr,PK。Ko,ctc.Pred∝on of Hot-CaJ忆r Dcgradaton indig⒒al CMOs VLSI bytiming si1Ⅱulation,IEDM Tcchnical digcst,1992∶539⒓] Hir0kazu Yonczuqa,Jingkun Fang,YosⅡyulci Kawakami,ctc.Rato bⅡed Hot-CaⅡicr Degrada-tion Modehng for Agcd Ti1neing Silnulation of Mi11ions of TransistorsDigital C△cuks,IEDM Tˉechnical digcst,1998∶93

[3]BTA TCchno1ogyINC”Rclpro+TM for Windows口M Uscrs    Manual,1997[4]BTA TCchnology,INC。,BTABERT Uscrs Manual,1997

   [5] CheFllming HU, simon C et a1.Hot Elcctron-hduGcd MOsFET DcgradatonModel,MonitOr and improvcment.IEEE Transactions on Elcctron Devices,1985,32(⑷∶375

[6]Y LCblebici,s M Kang era1.simulation of Hot-CaⅡicr Induced MOS CircotDcgradation for VLSI Reliabi1ity Analysis IEEE Transactions onRclcabili定吗199443(2)∶罗俊,郝跃,秦国林,等.微纳米CMOS VLSI电路可靠性仿真与设计.微电子学,142(2):255

   [8]杜春艳,庄奕琪,罗宏伟,CMOs数字电路抗热载流子研究,中国电子产品可靠性与环境试验,142(2):255

   [9]阮刚。集成电路工艺和器件的计算机模拟:IC TCAD技术概论.上海:复旦大学出版社

   [10]HU C,TAM s,HsU F C,Ko P K,ct a1.Hot钅lcctron-hduccd MOsFETdegradation-modcl, monitor and i1nprovemcnt. IEEE Transactions on Elcctron Dcviccs,1985,33

    WOLTJER R,Paulzen G M,POMP H qeta1.Three hot c盯⒒er degradationmcchanislns in dccp-submicron PMOSFET’s,IEEE Trans on Electron Dcviccs, 1995,42  (1): 109