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描绘并区分一个集成电路中各种组成器件的主要结构特征

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   1.描绘并区分一个集成电路中IP4062CX18/LF各种组成器件的主要结构特征。

   2.解释应用于集成电路中的不同隔离结构的作用。

   3.描绘并区分双极型和MOS晶体管的工作原理。

   4.列出不同MOS栅结构的种类和各自的优点。

   5.描绘并区分Bi-MOS的各个部分。

   参考文献

   [ 1 ] Camenzind,H. R.,Electron.ic In,tegrated Systems Des/gn.,1972,Van Nostrand Reinhold,Princeton,NJ:85.

    [ 2 ]  Singer,P., " Gearing Up for Cigabits, "  Semicon,ductor In,tern,ation,al,Nov. 1994:34.

   L3 ]  De Omellas, S., " Plasma Etch of Ferroelectric Capacitors in FeRAMs and DRAMs," Semicon.ductorIn,tern,ational,Sep. 1997 :103.

    [ 4 ]   Camenzind , H. R. , ELectronic  In,tegrated  Systems  Design , 1972 , Van  Nostrand  Reinhold , Princeton , NJ : 141 .

[5] Cleavelin, C., Columbo, L., Nimi, H., et al., Oxidation. and Gate Dielectrics, Han.dbook of Semicon.ductor

     Man,ufactu,rin,g Techn,ology,2008,CRC Press,New York,NY,9 -29.

    [ 6 ]  Pauleau,Y., "lnterconnect Material_s for VLSI Circuits,"  Solid State TechnoLogy,Apr. 1987 :157.

    L7 ]  "Industry News," Semicon,ductor In,tern,ational,Cahners Publishing,Apr. 1994:16.

    [ 8 ]  Frank, D., Hoffman, T., Nguyen, B. Y., et  al., Com,parison, Study of Fin,FEts:  SO/ vs.  Bulk, SOI  Industry

            Consortium ,www. soic,onsortium. org.

     [ 9 ]   Ghandhi, S.  K. , V/S/  Fabrication,  PrirzcipLes , 1994 ,John  Wiley  &  Sons ,Inc., New  York , NY :717.

    [ 10 ]  Wolf,S., " A Review of lC Isolation Technologies-Part  8 , "  Solid State Techn.ology,PennWell Publishing,Jun. 1993 :97.

    [ 11 ] Peters,L.,"High Hopes for High Energy Ion Implantation," Semiconductor Irzternational,Cahners Publishing,

           Jun. 1993 :84.

[12]  Yarling, C. B., " M. I. Current, Ion Implantation for the Challenges of ULSI and 200-mm Wafer

       Production," MicroeLectronic Manu)facturin,g an,d Testin,g,Mar. 1988 :15.

   [ 13 ]  Yallup,K., " SOI Provide Total DielectricIsolation , "  Semicon,du.ctor In,tern,ation,al,Cahners Publishing,Jul.

    [14 ]  Cunningham, A., " The PC inside Your Phone:  A Guide to the System-on-Chip," Arstechnica, Apr.10 ,2013.

    [ 15 ]  Anderson, P. W., " Elec:tronic  and Superconductors,"  in E. Ante ' bi  ( ed. ) , The  ELectron,ic  Epoch, Van

              Nostrand  Re,inhold , Princeton , NJ :66.

   [ 16 ]  Gabriel,K., " Engineering Microscopic Machines, "  Scien.Ufic American,Sep. 1995 :150.

   [ 17]  Bates,J.,"Rechargeable Thin-Film Lithium Microbatteries," Sotid .State TeclmoLogy-,PennWell Publishing,

          Jul. 1993 :59.

   [ 18 ]  Singer,P.,"The Optoelectronics Industry:  Has It Seen the Light?"  Semicon,ductor In,tern,ation,aI,Cahners

         Publishing,Jul. 1993 :70.


   1.描绘并区分一个集成电路中IP4062CX18/LF各种组成器件的主要结构特征。

   2.解释应用于集成电路中的不同隔离结构的作用。

   3.描绘并区分双极型和MOS晶体管的工作原理。

   4.列出不同MOS栅结构的种类和各自的优点。

   5.描绘并区分Bi-MOS的各个部分。

   参考文献

   [ 1 ] Camenzind,H. R.,Electron.ic In,tegrated Systems Des/gn.,1972,Van Nostrand Reinhold,Princeton,NJ:85.

    [ 2 ]  Singer,P., " Gearing Up for Cigabits, "  Semicon,ductor In,tern,ation,al,Nov. 1994:34.

   L3 ]  De Omellas, S., " Plasma Etch of Ferroelectric Capacitors in FeRAMs and DRAMs," Semicon.ductorIn,tern,ational,Sep. 1997 :103.

    [ 4 ]   Camenzind , H. R. , ELectronic  In,tegrated  Systems  Design , 1972 , Van  Nostrand  Reinhold , Princeton , NJ : 141 .

[5] Cleavelin, C., Columbo, L., Nimi, H., et al., Oxidation. and Gate Dielectrics, Han.dbook of Semicon.ductor

     Man,ufactu,rin,g Techn,ology,2008,CRC Press,New York,NY,9 -29.

    [ 6 ]  Pauleau,Y., "lnterconnect Material_s for VLSI Circuits,"  Solid State TechnoLogy,Apr. 1987 :157.

    L7 ]  "Industry News," Semicon,ductor In,tern,ational,Cahners Publishing,Apr. 1994:16.

    [ 8 ]  Frank, D., Hoffman, T., Nguyen, B. Y., et  al., Com,parison, Study of Fin,FEts:  SO/ vs.  Bulk, SOI  Industry

            Consortium ,www. soic,onsortium. org.

     [ 9 ]   Ghandhi, S.  K. , V/S/  Fabrication,  PrirzcipLes , 1994 ,John  Wiley  &  Sons ,Inc., New  York , NY :717.

    [ 10 ]  Wolf,S., " A Review of lC Isolation Technologies-Part  8 , "  Solid State Techn.ology,PennWell Publishing,Jun. 1993 :97.

    [ 11 ] Peters,L.,"High Hopes for High Energy Ion Implantation," Semiconductor Irzternational,Cahners Publishing,

           Jun. 1993 :84.

[12]  Yarling, C. B., " M. I. Current, Ion Implantation for the Challenges of ULSI and 200-mm Wafer

       Production," MicroeLectronic Manu)facturin,g an,d Testin,g,Mar. 1988 :15.

   [ 13 ]  Yallup,K., " SOI Provide Total DielectricIsolation , "  Semicon,du.ctor In,tern,ation,al,Cahners Publishing,Jul.

    [14 ]  Cunningham, A., " The PC inside Your Phone:  A Guide to the System-on-Chip," Arstechnica, Apr.10 ,2013.

    [ 15 ]  Anderson, P. W., " Elec:tronic  and Superconductors,"  in E. Ante ' bi  ( ed. ) , The  ELectron,ic  Epoch, Van

              Nostrand  Re,inhold , Princeton , NJ :66.

   [ 16 ]  Gabriel,K., " Engineering Microscopic Machines, "  Scien.Ufic American,Sep. 1995 :150.

   [ 17]  Bates,J.,"Rechargeable Thin-Film Lithium Microbatteries," Sotid .State TeclmoLogy-,PennWell Publishing,

          Jul. 1993 :59.

   [ 18 ]  Singer,P.,"The Optoelectronics Industry:  Has It Seen the Light?"  Semicon,ductor In,tern,ation,aI,Cahners

         Publishing,Jul. 1993 :70.


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