IGW30N60T详细规格
- 类别:IGBT - 单路
- 描述:IGBT 600V 60A 187.0W TO247-3
- 系列:TrenchStop™
- 制造商:Infineon Technologies
- IGBT类型:沟道和场截止
- 电压_集电极发射极击穿(最大):600V
- VgewwwwIc时的最大Vce(开):2.05V @ 15V,30A
- 电流_集电极333Ic444(最大):60A
- 功率_最大:187W
- 输入类型:标准
- 安装类型:通孔
- 封装/外壳:TO-247-3
- 供应商设备封装:PG-TO247-3
- 包装:管件
- 存储器 IDT, Integrated Device Technology Inc 80-LQFP IC SRAM 256KBIT 25NS 80TQFP
- 逻辑 - FIFO IDT, Integrated Device Technology Inc 80-LQFP IC FIFO 8192X18 10NS 80QFP
- IGBT - 单路 Infineon Technologies TO-247-3 IGBT 1200V 30A 110W YO247-3
- 时钟/计时 - 时钟发生器,PLL,频率合成器 IDT, Integrated Device Technology Inc 32-VFQFN 裸露焊盘 IC SYNTHESIZER LVPECL 32-VFQFPN
- 适配器 Freescale Semiconductor SOCKET MINI GRID 480-BGA 1.27MM
- 存储器 IDT, Integrated Device Technology Inc 68-LCC(J 形引线) IC SRAM 72KBIT 35NS 68PLCC
- 陶瓷 Murata Electronics North America 0805(2012 公制) CAP CER 0.22UF 16V 10% X7R 0805
- 存储器 IDT, Integrated Device Technology Inc 68-LCC(J 形引线) IC SRAM 256KBIT 55NS 68PLCC
- 逻辑 - FIFO IDT, Integrated Device Technology Inc 80-LQFP IC FIFO 8192X18 6NS 80QFP
- 时钟/计时 - 时钟发生器,PLL,频率合成器 IDT, Integrated Device Technology Inc 64-TQFP 裸露焊盘 IC SYNTHESIZER LVPECL 64-TQFP
- 存储器 IDT, Integrated Device Technology Inc 80-LQFP IC SRAM 144KBIT 20NS 80TQFP
- 存储器 IDT, Integrated Device Technology Inc 68-LCC(J 形引线) IC SRAM 256KBIT 25NS 68PLCC
- 陶瓷 Murata Electronics North America 0805(2012 公制) CAP CER 2.2UF 16V 10% X7R 0805
- 逻辑 - FIFO IDT, Integrated Device Technology Inc 132-BQFP 缓冲式 IC FIFO BI SYNC 4096X36 132QFP
- 时钟/计时 - 时钟发生器,PLL,频率合成器 IDT, Integrated Device Technology Inc 24-TSSOP(0.173",4.40mm 宽) IC SYNTHESIZER LVPECL 24TSSOP