

FQT3P20TF详细规格
- 类别:FET - 单
- 描述:MOSFET P-CH 200V 0.67A SOT-223
- 系列:QFET™
- 制造商:Fairchild Semiconductor
- FET型:MOSFET P 通道,金属氧化物
- FET特点:标准
- 漏极至源极电压333Vdss444:200V
- 电流_连续漏极333Id4440a025000C:670mA
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:2.7 欧姆 @ 335mA,10V
- Id时的Vgs333th444(最大):5V @ 250µA
- 闸电荷333Qg4440a0Vgs:8nC @ 10V
- 输入电容333Ciss4440a0Vds:250pF @ 25V
- 功率_最大:2.5W
- 安装类型:表面贴装
- 封装/外壳:TO-261-4,TO-261AA
- 供应商设备封装:SOT-223-4
- 包装:带卷 (TR)
FQT3P20TF详细规格
- 类别:FET - 单
- 描述:MOSFET P-CH 200V 0.67A SOT-223
- 系列:QFET™
- 制造商:Fairchild Semiconductor
- FET型:MOSFET P 通道,金属氧化物
- FET特点:标准
- 漏极至源极电压333Vdss444:200V
- 电流_连续漏极333Id4440a025000C:670mA
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:2.7 欧姆 @ 335mA,10V
- Id时的Vgs333th444(最大):5V @ 250µA
- 闸电荷333Qg4440a0Vgs:8nC @ 10V
- 输入电容333Ciss4440a0Vds:250pF @ 25V
- 功率_最大:2.5W
- 安装类型:表面贴装
- 封装/外壳:TO-261-4,TO-261AA
- 供应商设备封装:SOT-223-4
- 包装:Digi-Reel®
FQT3P20TF详细规格
- 类别:FET - 单
- 描述:MOSFET P-CH 200V 0.67A SOT-223
- 系列:QFET™
- 制造商:Fairchild Semiconductor
- FET型:MOSFET P 通道,金属氧化物
- FET特点:标准
- 漏极至源极电压333Vdss444:200V
- 电流_连续漏极333Id4440a025000C:670mA
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:2.7 欧姆 @ 335mA,10V
- Id时的Vgs333th444(最大):5V @ 250µA
- 闸电荷333Qg4440a0Vgs:8nC @ 10V
- 输入电容333Ciss4440a0Vds:250pF @ 25V
- 功率_最大:2.5W
- 安装类型:表面贴装
- 封装/外壳:TO-261-4,TO-261AA
- 供应商设备封装:SOT-223-4
- 包装:剪切带 (CT)
FQT3P20TF_SB82100详细规格
- 类别:FET - 单
- 描述:MOSFET P-CH 200V 670MA SOT-223-4
- 系列:QFET™
- 制造商:Fairchild Semiconductor
- FET型:MOSFET P 通道,金属氧化物
- FET特点:标准
- 漏极至源极电压333Vdss444:200V
- 电流_连续漏极333Id4440a025000C:670mA
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:2.7 欧姆 @ 335mA,10V
- Id时的Vgs333th444(最大):5V @ 250µA
- 闸电荷333Qg4440a0Vgs:8nC @ 10V
- 输入电容333Ciss4440a0Vds:250pF @ 25V
- 功率_最大:2.5W
- 安装类型:表面贴装
- 封装/外壳:TO-261-4,TO-261AA
- 供应商设备封装:SOT-223-4
- 包装:剪切带 (CT)
FQT3P20TF_SB82100详细规格
- 类别:FET - 单
- 描述:MOSFET P-CH 200V 670MA SOT-223-4
- 系列:QFET™
- 制造商:Fairchild Semiconductor
- FET型:MOSFET P 通道,金属氧化物
- FET特点:标准
- 漏极至源极电压333Vdss444:200V
- 电流_连续漏极333Id4440a025000C:670mA
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:2.7 欧姆 @ 335mA,10V
- Id时的Vgs333th444(最大):5V @ 250µA
- 闸电荷333Qg4440a0Vgs:8nC @ 10V
- 输入电容333Ciss4440a0Vds:250pF @ 25V
- 功率_最大:2.5W
- 安装类型:表面贴装
- 封装/外壳:TO-261-4,TO-261AA
- 供应商设备封装:SOT-223-4
- 包装:Digi-Reel®
FQT3P20TF_SB82100详细规格
- 类别:FET - 单
- 描述:MOSFET P-CH 200V 670MA SOT-223-4
- 系列:QFET™
- 制造商:Fairchild Semiconductor
- FET型:MOSFET P 通道,金属氧化物
- FET特点:标准
- 漏极至源极电压333Vdss444:200V
- 电流_连续漏极333Id4440a025000C:670mA
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:2.7 欧姆 @ 335mA,10V
- Id时的Vgs333th444(最大):5V @ 250µA
- 闸电荷333Qg4440a0Vgs:8nC @ 10V
- 输入电容333Ciss4440a0Vds:250pF @ 25V
- 功率_最大:2.5W
- 安装类型:表面贴装
- 封装/外壳:TO-261-4,TO-261AA
- 供应商设备封装:SOT-223-4
- 包装:带卷 (TR)
- FET - 单 Fairchild Semiconductor TO-261-4,TO-261AA MOSFET N-CH 600V 200MA SOT-223-4
- Card Edge, Edgeboard Connectors Sullins Connector Solutions 5mm x 20mm CONN EDGECARD 20POS DIP .100 SLD
- 跳线,预压接线 Hirose Electric Co Ltd 9-DIP 模块,1/2 砖 JUMPER-H9991TR/A3047N/H9991TR 4"
- FET - 单 Fairchild Semiconductor TO-261-4,TO-261AA MOSFET N-CH 800V 0.2A SOT-223
- Card Edge, Edgeboard Connectors Sullins Connector Solutions 5mm x 20mm CONN EDGECARD 20POS DIP .100 SLD
- 跳线,预压接线 Hirose Electric Co Ltd 9-DIP 模块,1/2 砖 JUMPER-H9991TR/A3048Y/H9991TR 4"
- FET - 单 Fairchild Semiconductor TO-261-4,TO-261AA MOSFET P-CH 200V 0.67A SOT-223
- Card Edge, Edgeboard Connectors Sullins Connector Solutions 5mm x 20mm CONN EDGECARD 20POS DIP .100 SLD
- 跳线,预压接线 Hirose Electric Co Ltd 9-DIP 模块,1/2 砖 JUMPER-H9991TR/A3048B/H9991TR 5"
- Card Edge, Edgeboard Connectors Sullins Connector Solutions CONN EDGECARD 20POS DIP .100 SLD
- 跳线,预压接线 Hirose Electric Co Ltd 9-DIP 模块,1/2 砖 JUMPER-H9991TR/A3048B/H9991TR 6"
- 跳线,预压接线 Hirose Electric Co Ltd 9-DIP 模块,1/2 砖 JUMPER-H9991TR/A3048G/H9991TR 6"
- FET - 单 Fairchild Semiconductor TO-261-4,TO-261AA MOSFET N-CH 200V 0.85A SOT-223
- Card Edge, Edgeboard Connectors Sullins Connector Solutions CONN EDGECARD 20POS DIP .100 SLD
- 跳线,预压接线 Hirose Electric Co Ltd 9-DIP 模块,1/2 砖 JUMPER-H9991TR/A3047L/H9991TR 6"